Technical parameters/rated voltage (DC): -300 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 40 @30mA, 10V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STPSA92
|
ST Microelectronics | 完全替代 | TO-92-3 |
小信号PNP晶体管 SMALL SIGNAL PNP TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review