Technical parameters/frequency: 50 MHz
Technical parameters/rated voltage (DC): -300 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 40 @30mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.95 mm
External dimensions/width: 3.94 mm
External dimensions/height: 4.95 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4403BU
|
ON Semiconductor | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403BU 单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
|
||
MPSA92G
|
ON Semiconductor | 功能相似 | TO-92-3 |
ON SEMICONDUCTOR MPSA92G 单晶体管 双极, 通用, PNP, -300 V, 50 MHz, 625 mW, -500 mA, 50 hFE
|
||
STPSA92-AP
|
ST Microelectronics | 完全替代 | TO-226-3 |
小信号PNP晶体管 SMALL SIGNAL PNP TRANSISTOR
|
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