Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 480 mΩ
Technical parameters/dissipated power: 85 W
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/leakage source breakdown voltage: 650 V
Technical parameters/Input capacitance (Ciss): 644pF @100V(Vds)
Technical parameters/rated power (Max): 85 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 85W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STI21N65M5
|
ST Microelectronics | 功能相似 | TO-262-3 |
N沟道650 V， 0.150 I© ， 17的MDmeshâ ?? ¢ V功率MOSFET D²PAK ， TO- 220FP ， TO- 220 ， I²PAK ， TO- 247 N-channel 650 V, 0.150 Ω, 17 A MDmesh⢠V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247
|
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