Technical parameters/drain source resistance: 0.15 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 17A
Technical parameters/Input capacitance (Ciss): 1950pF @100V(Vds)
Technical parameters/rated power (Max): 125 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STI8N65M5
|
ST Microelectronics | 类似代替 | TO-262-3 |
N沟道650 V， 0.56 Ω ， 7的的MDmesh ？ V功率MOSFET N-channel 650 V, 0.56 Ω, 7 A MDmesh? V Power MOSFET
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