Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 690pF @100V(Vds)
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STI21N65M5
|
ST Microelectronics | 类似代替 | TO-262-3 |
N沟道650 V， 0.150 I© ， 17的MDmeshâ ?? ¢ V功率MOSFET D²PAK ， TO- 220FP ， TO- 220 ， I²PAK ， TO- 247 N-channel 650 V, 0.150 Ω, 17 A MDmesh⢠V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247
|
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