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Model STP5NB40
Description N - PowerMESH N - CHANNEL ENHANMENT MODE PowerMESH MOSFET with Channel Enhancement
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Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1408) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 400 V

Technical parameters/rated current: 4.70 A

Technical parameters/drain source resistance: 1.75 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 80W (Tc)

Technical parameters/drain source voltage (Vds): 400 V

Technical parameters/leakage source breakdown voltage: 400 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 4.70 A

Technical parameters/rise time: 8.00 ns

Technical parameters/Input capacitance (Ciss): 405pF @25V(Vds)

Technical parameters/rated power (Max): 80 W

Technical parameters/dissipated power (Max): 80W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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