Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 74.0 W |
|
Technical parameters/drain source voltage (Vds): | 400 V |
|
Technical parameters/Continuous drain current (Ids): | 4.00 A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF720
|
VISHAY | 类似代替 | TO-220-3 |
N沟道 400V 3.3A
|
||
IRF720
|
Microsemi | 类似代替 |
N沟道 400V 3.3A
|
|||
IRF720
|
Vishay Siliconix | 类似代替 | TO-220-3 |
N沟道 400V 3.3A
|
||
IRF720
|
ST Microelectronics | 类似代替 | SFM |
N沟道 400V 3.3A
|
||
IRF720
|
New Jersey Semiconductor | 类似代替 |
N沟道 400V 3.3A
|
|||
IRF720
|
Infineon | 类似代替 |
N沟道 400V 3.3A
|
|||
|
|
International Rectifier | 功能相似 |
TO-220 N-CH 400V 2.8A
|
|||
|
|
Fairchild | 功能相似 |
TO-220 N-CH 400V 2.8A
|
|||
|
|
New Jersey Semiconductor | 功能相似 | 3 |
TO-220 N-CH 400V 2.8A
|
||
STP5NB40
|
ST Microelectronics | 功能相似 | TO-220-3 |
N - 沟道增强型MOSFET的PowerMESH N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
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