Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 190 W
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 28A
Technical parameters/Input capacitance (Ciss): 2700pF @100V(Vds)
Technical parameters/rated power (Max): 190 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 190W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHP30N60E-GE3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
E系列功率MOSFET E Series Power MOSFET
|
||
SIHP30N60E-GE3
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
E系列功率MOSFET E Series Power MOSFET
|
||
SIHP30N60E-GE3
|
Vishay Intertechnology | 功能相似 | TO-220 |
E系列功率MOSFET E Series Power MOSFET
|
||
STP32N65M5
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STP32N65M5 功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.095 ohm, 10 V, 4 V
|
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