Technical parameters/number of channels: | 1 |
|
Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.104 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 250 W |
|
Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Input capacitance (Ciss): | 2600pF @100V(Vds) |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 250 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.51 mm |
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Dimensions/Width: | 4.65 mm |
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Dimensions/Height: | 15.49 mm |
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Dimensions/Packaging: | TO-220-3 |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | LED Lighting, Portable Devices, Lighting, Computers & Computer Peripherals, Power Management, Communications & Networking, Motor Drive & Control, Industrial, Alternative Energy |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHP30N60E-E3
|
Vishay Siliconix | 完全替代 | TO-220-3 |
E系列功率MOSFET E Series Power MOSFET
|
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