Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.13 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 170 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 21A
Technical parameters/rise time: 7.3 ns
Technical parameters/Input capacitance (Ciss): 1500pF @100V(Vds)
Technical parameters/descent time: 9.3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 170W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP23NM60ND
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STP23NM60ND 功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
|
||
STP25NM60ND
|
ST Microelectronics | 类似代替 | TO-220-3 |
N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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