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Model STP15NM60N
Description NChannel 600V -0.270 ヘ -14A-D2/I2PAK - TO -220/FP - TO -247 Second generation MDmesh ⑩ Power MOSFET N-channel 600V -0.270 ヘ -14A-D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh ⑩ Power MOSFET
Product QR code
Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
18.86  yuan 18.86yuan
5+:
$ 22.0639
50+:
$ 21.1210
200+:
$ 20.5929
500+:
$ 20.4609
1000+:
$ 20.3289
2500+:
$ 20.1781
5000+:
$ 20.0838
7500+:
$ 19.9895
Quantity
5+
50+
200+
500+
1000+
Price
$22.0639
$21.1210
$20.5929
$20.4609
$20.3289
Price $ 22.0639 $ 21.1210 $ 20.5929 $ 20.4609 $ 20.3289
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2962) Minimum order quantity(5)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 125W (Tc)

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 14A

Technical parameters/Input capacitance (Ciss): 1250pF @50V(Vds)

Technical parameters/rated power (Max): 125 W

Technical parameters/dissipated power (Max): 125W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP21NM60ND STP21NM60ND ST Microelectronics 类似代替 TO-220-3
STMICROELECTRONICS STP21NM60ND 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
PDF
STP23NM60ND STP23NM60ND ST Microelectronics 类似代替 TO-220-3
STMICROELECTRONICS STP23NM60ND 功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V

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