Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 8.00 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 15 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/breakdown voltage of gate source: ±18.0 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/rise time: 32 ns
Technical parameters/Input capacitance (Ciss): 965pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 8.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2W (Ta), 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerFLAT-8
External dimensions/length: 5 mm
External dimensions/width: 6 mm
External dimensions/height: 0.81 mm
External dimensions/packaging: PowerFLAT-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STL9N3LLH5
|
ST Microelectronics | 功能相似 | PowerVDFN-8 |
N沟道30 V ， 0.015 Ω ， 9 A， PowerFLAT ？ （ 3.3x3.3 ）的STripFET ？ V功率MOSFET N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT? (3.3x3.3) STripFET? V Power MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review