Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2W (Ta), 50W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 9A
Technical parameters/rise time: 4.2 ns
Technical parameters/Input capacitance (Ciss): 724pF @25V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/descent time: 3.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2W (Ta), 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerVDFN-8
External dimensions/packaging: PowerVDFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STL8NH3LL
|
ST Microelectronics | 功能相似 | PowerFLAT-8 |
N沟道30V - 0.012ohm - 8A - PowerFLAT超低栅极电荷的STripFET功率MOSFET N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET
|
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