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Model STL50NH3LL
Description NChannel 30V -0.011-13A - Power FLAT (pin 6x5) STripFET power with ultra-low gate charge MOSFET N-channel 30V - 0.011 - 13A - PowerFLAT (6x5) Ultra low gate charge STripFET Power MOSFET
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Brand: ST Microelectronics
Packaging PowerVDFN-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.31  yuan 5.31yuan
10+:
$ 6.3744
100+:
$ 6.0557
500+:
$ 5.8432
1000+:
$ 5.8326
2000+:
$ 5.7901
5000+:
$ 5.7370
7500+:
$ 5.6945
10000+:
$ 5.6732
Quantity
10+
100+
500+
1000+
2000+
Price
$6.3744
$6.0557
$5.8432
$5.8326
$5.7901
Price $ 6.3744 $ 6.0557 $ 5.8432 $ 5.8326 $ 5.7901
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8646) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 27.0 A

Technical parameters/drain source resistance: 13.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 60W (Tc)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±16.0 V

Technical parameters/Continuous drain current (Ids): 27.0 A

Technical parameters/Input capacitance (Ciss): 965pF @25V(Vds)

Technical parameters/rated power (Max): 4 W

Technical parameters/dissipated power (Max): 60W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: PowerVDFN-8

External dimensions/packaging: PowerVDFN-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSC080N03LSGATMA1 BSC080N03LSGATMA1 Infineon 功能相似 PG-TDSON-8
INFINEON BSC080N03LSGATMA1 晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
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