Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 20.0 A
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 200 W
Technical parameters/input capacitance: 2300 pF
Technical parameters/rise time: 220 ns
Technical parameters/breakdown voltage (collector emitter): 442 V
Technical parameters/thermal resistance: 62.5 ℃/W
Technical parameters/rated power (Max): 200 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.4 mm
External dimensions/width: 9.35 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Automotive, Power management, automotive use
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STGB20NB41LZ
|
ST Microelectronics | 功能相似 | D2PAK |
N沟道固支20A - DPAK内部钳位的PowerMESH IGBT N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review