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Model STF19NM65N
Description NChannel 650 V -0.25 Ω -15.5- TO-220/FP-D2/I2PAK - TO-247 second-generation MDmesh ™ Power MOSFET N-channel 650 V -0.25 Ω -15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh ™ Power MOSFET
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Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3583) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 270 mΩ

Technical parameters/dissipated power: 35 W

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/leakage source breakdown voltage: 650 V

Technical parameters/rise time: 8 ns

Technical parameters/Input capacitance (Ciss): 1900pF @50V(Vds)

Technical parameters/descent time: 26 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 35W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.4 mm

External dimensions/width: 4.6 mm

External dimensions/height: 9.3 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STF20NM65N STF20NM65N ST Microelectronics 类似代替 TO-220-3
N 通道 MDmesh™，600V/650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
PDF
STF24N65M2 STF24N65M2 ST Microelectronics 类似代替 TO-220-3
N-沟道 650 V 0.23 Ω 30 W 法兰安装 MDmesh M2 功率 Mosfet - TO-220FP
PDF

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