Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.25 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 30 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 15A
Technical parameters/rise time: 13.5 ns
Technical parameters/Input capacitance (Ciss): 1280pF @50V(Vds)
Technical parameters/rated power (Max): 30 W
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 30W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 16.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF19NM65N
|
ST Microelectronics | 类似代替 | TO-220-3 |
N沟道650 V - 0.25 Ω - 15.5 - TO- 220 / FP -D2 / I2PAK - TO-247第二代的MDmesh ™功率MOSFET N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET
|
||
STF24N65M2
|
ST Microelectronics | 类似代替 | TO-220-3 |
N-沟道 650 V 0.23 Ω 30 W 法兰安装 MDmesh M2 功率 Mosfet - TO-220FP
|
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