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Model STD30NE06L
Description N - CHANNEL 60V - 0.025STripFET power MOSFET N - CHANNEL 60V -0.025 ohm -30A TO-252 STripFET POWER MOSFET
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Brand: ST Microelectronics
Packaging TO-252-3
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1001) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 30.0 A

Technical parameters/drain source resistance: 22.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 55W (Tc)

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 30.0 A

Technical parameters/Input capacitance (Ciss): 2370pF @25V(Vds)

Technical parameters/dissipated power (Max): 55W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP10P6F6 STP10P6F6 ST Microelectronics 功能相似 TO-220-3
P沟道60 V ， 0.15 I© （典型值） ， 10 A STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET采用DPAK和TO- 220封装 P-channel 60 V, 0.15 Ω typ., 10 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and TO-220 packages
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