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Model STD6NM60N
Description NChannel 600V -0.85 ヘ -4.6A - TO -220- TO -220FP - IPAK - DPAK Second Generation MDmesh ⑩ Power MOSFET N-channel 600V -0.85 ヘ -4.6A - TO-220- TO-220FP - IPAK - DPAK Second Generation MDmesh ⑩ Power MOSFET
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Brand: ST Microelectronics
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9113) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 920 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 45 W

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/Continuous drain current (Ids): 2.30 A

Technical parameters/rise time: 8 ns

Technical parameters/Input capacitance (Ciss): 420pF @50V(Vds)

Technical parameters/rated power (Max): 45 W

Technical parameters/descent time: 9 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 45W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 10.4 mm

External dimensions/width: 9.35 mm

External dimensions/height: 4.6 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STD18N55M5 STD18N55M5 ST Microelectronics 类似代替 TO-252-3
STMICROELECTRONICS STD18N55M5 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
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