Technical parameters/dissipated power: 45W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Input capacitance (Ciss): 400pF @50V(Vds)
Technical parameters/rated power (Max): 45 W
Technical parameters/dissipated power (Max): 45W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD8NM50N
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™,500V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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