Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 0.73 Ω |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 45 W |
|
Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/rise time: | 4.4 ns |
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Technical parameters/Input capacitance (Ciss): | 364pF @50V(Vds) |
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Technical parameters/rated power (Max): | 45 W |
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Technical parameters/descent time: | 8.8 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 45W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.6 mm |
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Dimensions/Width: | 6.2 mm |
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Dimensions/Height: | 2.4 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD7NM50N-1
|
ST Microelectronics | 功能相似 | TO-251-3 |
N沟道500V - 0.70ヘ - 5A - TO- 220 - TO- 220FP - IPAK - DPAK第二代MDmesh⑩功率MOSFET N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
|
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