Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 3.00 A
Technical parameters/drain source resistance: 1.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 42W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 4 ns
Technical parameters/forward voltage (Max): 1.5 V
Technical parameters/Input capacitance (Ciss): 324pF @25V(Vds)
Technical parameters/rated power (Max): 42 W
Technical parameters/descent time: 10.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPS03N60C3
|
Infineon | 功能相似 | TO-251-3 |
酷MOS ™功率晶体管提供新的革命性的高电压技术 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review