Technical parameters/drain source resistance: 1.26 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 38 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 3.20 A
Technical parameters/rise time: 3 ns
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.73 mm
External dimensions/width: 2.38 mm
External dimensions/height: 6.22 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD3NM60T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N沟道600 V ， 1.3升© ， 3 A TO -220 ， DPAK ， IPAK齐纳保护MDmeshâ ?? ¢功率MOSFET N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh⢠Power MOSFET
|
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