Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 5.80 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.56 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/input capacitance: 1350 pF
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 5.80 A
Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 1350pF @25V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.4 mm
External dimensions/width: 9.35 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQB5N90TM
|
Fairchild | 功能相似 | TO-263-3 |
QFET® N 通道 MOSFET，高达 5.9A，Fairchild Semiconductor Fairchild Semiconductor 的新型 QFET® 平面 MOSFET 使用先进的专利技术为广泛的应用提供最佳的工作性能，包括电源、PFC（功率因数校正）、直流－直流转换器、等离子显示面板 (PDP)、照明镇流器和运动控制。 它们通过降低导通电阻 (RDS(on)) 来减少通态损耗，并通过降低栅极电荷 (Qg) 和输出电容 (Coss) 来减少切换损耗。 通过使用先进的 QFET® 工艺技术，Fairchild 可提供比竞争平面 MOSFET 设备更高的品质因素 (FOM)。
|
||
FQB6N90TM_AM002
|
Fairchild | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 900V 5.8A 3Pin(2+Tab) D2PAK T/R
|
||
FQB6N90TM_AM002
|
ON Semiconductor | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 900V 5.8A 3Pin(2+Tab) D2PAK T/R
|
||
STB6NB90
|
ST Microelectronics | 功能相似 | D2PAK |
N - CHANNEL 900V - 1.7Ω - 5.8A - D2PAK PowerMESHO MOSFET N - CHANNEL 900V - 1.7Ω - 5.8A - D2PAK PowerMESHO MOSFET
|
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