Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 5.80 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 1.9 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.13 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 5.80 A
Technical parameters/rise time: 80 ns
Technical parameters/Input capacitance (Ciss): 1880pF @25V(Vds)
Technical parameters/descent time: 55 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 3.13W (Ta), 167W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB6NK90ZT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB6NK90ZT4 功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
|
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