Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 115 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/drain source voltage (Vds): 700 V
Technical parameters/rise time: 17 ns
Technical parameters/Input capacitance (Ciss): 1370pF @25V(Vds)
Technical parameters/rated power (Max): 115 W
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 115W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STI11NM80
|
ST Microelectronics | 类似代替 | TO-262-3 |
MOSFET N-Ch 800V 0.35Ω 11A MDmesh
|
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