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Description MOSFET N-Ch 800V 0.35Ω 11A MDmesh
Product QR code
Packaging TO-262-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
36.36  yuan 36.36yuan
1+:
$ 44.3641
10+:
$ 41.8186
100+:
$ 39.9277
250+:
$ 39.6368
500+:
$ 39.3458
1000+:
$ 39.0186
2500+:
$ 38.7277
5000+:
$ 38.5458
Quantity
1+
10+
100+
250+
500+
Price
$44.3641
$41.8186
$39.9277
$39.6368
$39.3458
Price $ 44.3641 $ 41.8186 $ 39.9277 $ 39.6368 $ 39.3458
Start batch production 1+ 10+ 100+ 250+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(5580) Minimum order quantity(1)
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Technical parameters/dissipated power: 150W (Tc)

Technical parameters/drain source voltage (Vds): 800 V

Technical parameters/rise time: 17 ns

Technical parameters/Input capacitance (Ciss): 1630pF @25V(Vds)

Technical parameters/descent time: 15 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 150W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-262-3

External dimensions/packaging: TO-262-3

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STB9NK70Z-1 STB9NK70Z-1 ST Microelectronics 类似代替 TO-262-3
STMICROELECTRONICS STB9NK70Z-1 功率场效应管, MOSFET, N沟道, 7.5 A, 700 V, 1 ohm, 10 V, 3.75 V
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