Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 17.0 A
Technical parameters/drain source resistance: 190 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140W (Tc)
Technical parameters/input capacitance: 1.95 nF
Technical parameters/gate charge: 66.6 nC
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1900pF @50V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/descent time: 31 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB24NM60N
|
ST Microelectronics | 类似代替 | TO-263-3 |
STMICROELECTRONICS STB24NM60N 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
|
||
STW24NM60N
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW24NM60N 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
|
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