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Model STB24NM60N

Description STMICROELECTRONICS STB24NM60N 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V

Brand: ST Microelectronics

Packaging TO-263-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.168 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	125 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/rise time:	16.5 ns
Technical parameters/Input capacitance (Ciss):	1400pF @50V(Vds)
Technical parameters/rated power (Max):	125 W
Technical parameters/descent time:	37 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	125W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Length:	10.75 mm
Dimensions/Width:	10.4 mm
Dimensions/Height:	4.6 mm
Dimensions/Packaging:	TO-263-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	STB21NM60N	ST Microelectronics	类似代替	TO-263-3	N沟道600V - 0.19欧姆 - 17 A TO - 220 / FP / D2 / I2PAK / TO- 247第二代的MDmesh MOSFET N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET	PDF
	STW24NM60N	ST Microelectronics	完全替代	TO-247-3	STMICROELECTRONICS STW24NM60N 功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V	PDF