Technical parameters/drain source resistance: 0.0029 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 330 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 120A
Technical parameters/rise time: 150 ns
Technical parameters/Input capacitance (Ciss): 6800pF @25V(Vds)
Technical parameters/rated power (Max): 330 W
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 330W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.4 mm
External dimensions/width: 9.35 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQM120N06-04L-GE3
|
Vishay Semiconductor | 类似代替 | TO-263 |
Trans MOSFET N-CH 60V 120A 3Pin(2+Tab) TO-263
|
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