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Model SQM120N06-04L-GE3
Description Trans MOSFET N-CH 60V 120A 3Pin(2+Tab) TO-263
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Brand: Vishay Semiconductor
Packaging TO-263
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Standard packaging quantity 1
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3115) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.0028 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 375 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/rise time: 23 ns

Technical parameters/descent time: 35 ns

Technical parameters/operating temperature (Max): 175 ℃

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263

External dimensions/packaging: TO-263

Physical parameters/operating temperature: -55℃ ~ 175℃

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BUK762R6-60E BUK762R6-60E Nexperia 功能相似 TO-263
NXP BUK762R6-60E 晶体管, MOSFET, N沟道, 120 A, 60 V, 1970 µohm, 10 V, 3 V
BUK762R6-60E BUK762R6-60E NXP 功能相似 TO-263
NXP BUK762R6-60E 晶体管, MOSFET, N沟道, 120 A, 60 V, 1970 µohm, 10 V, 3 V
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