Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7 mΩ
Technical parameters/dissipated power: 300 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/rise time: 150 ns
Technical parameters/Input capacitance (Ciss): 3650pF @25V(Vds)
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.4 mm
External dimensions/width: 9.35 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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|---|---|---|---|---|---|---|
FDB8441_F085
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PowerTrench® N 通道 MOSFET，超过 60A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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SPB80N04S2-04
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Infineon | 功能相似 | TO-263-3-2 |
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