Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 80.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300W (Tc)
Technical parameters/input capacitance: 6.98 nF
Technical parameters/gate charge: 170 nC
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/Input capacitance (Ciss): 6980pF @25V(Vds)
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3-2
External dimensions/packaging: TO-263-3-2
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPB80N04S2-04
|
Infineon | 功能相似 | TO-263-3 |
OptiMOS㈢功率三极管 OptiMOS㈢ Power-Transistor
|
||
STB150NF04
|
ST Microelectronics | 功能相似 | TO-263-3 |
N沟道40 V - 0.005 Ω - 80 A - D2PAK的STripFET ™II功率MOSFET N-channel 40 V - 0.005 Ω - 80 A - D2PAK STripFET™II Power MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review