Technical parameters/frequency: 40 MHz
Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -50.0 mA
Technical parameters/dissipated power: 350 mW
Technical parameters/gain bandwidth product: 40 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 250 @100µA, 5V
Technical parameters/Maximum current amplification factor (hFE): 800
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KST5087
|
Samsung | 功能相似 | SOT-23 |
低噪声晶体管 Low Noise Transistor
|
||
MMBT5087LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT5087LT1G 单晶体管 双极, 通用, PNP, -50 V, 40 MHz, 225 mW, -50 mA, 40 hFE
|
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