Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): | -50V |
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Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): | −50V |
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Other/collector continuous output current ICCollector Current (IC): | -50mA |
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Other/Cut off Frequency fTTransmission Frequency (fT): | 40MHz |
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Other/DC current gain hFEDC Current Gain (hFE): | 250~800 |
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Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: | -300mV/-0.3V |
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Other/dissipated power PcPoWer Dissipation: | 350mW/0.35W |
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Other/Specification PDF: | __ |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KST5087
|
Samsung | 功能相似 | SOT-23 |
低噪声晶体管 Low Noise Transistor
|
||
KST5087MTF
|
Fairchild | 功能相似 | SOT-23-3 |
Trans GP BJT PNP 50V 0.05A 3Pin SOT-23 T/R
|
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