Technical parameters/rated current: 10.0 mA
Technical parameters/breakdown voltage: -25.0 V
Technical parameters/drain source resistance: 300 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/Continuous drain current (Ids): 1.00 mA
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/height: 1.02 mm
External dimensions/packaging: TO-236
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 |
ON SEMICONDUCTOR MMBFU310LT1G 晶体管, JFET, JFET, 25 V, 24 mA, 60 mA, 6 V, SOT-23, JFET
|
|||
PMBFJ108,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PMBFJ108,215 晶体管, JFET, JFET, -25 V, 80 mA, -3 V, SOT-23
|
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