Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/Continuous drain current (Ids): 8.00 mA
Technical parameters/breakdown voltage: 25 V
Technical parameters/Input capacitance (Ciss): 5pF @15V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFR31,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 JFET,NXP ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
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Motorola | 功能相似 |
ON SEMICONDUCTOR MMBFU310LT1G 晶体管, JFET, JFET, 25 V, 24 mA, 60 mA, 6 V, SOT-23, JFET
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PMBFJ108,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PMBFJ108,215 晶体管, JFET, JFET, -25 V, 80 mA, -3 V, SOT-23
|
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