Technical parameters/power supply voltage (DC): 2.30V (min)
Technical parameters/working voltage: 2.3V ~ 3.6V
Technical parameters/number of pins: 8
Technical parameters/clock frequency: 80 MHz
Technical parameters/digits: 8
Technical parameters/memory capacity: 500000 B
Technical parameters/access time (Max): 12 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 2.3V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 2.3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.25 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AT45DB041E-SHN-B
|
Adesto Technologies | 功能相似 | SOIC-8 |
ADESTO TECHNOLOGIES AT45DB041E-SHN-B 闪存, 串行, 4 Mbit, 2048 页 x 256字节, 85 MHz, SPI, SOIC, 8 引脚
|
||
AT45DB041E-SHN-B
|
ETC2 | 功能相似 |
ADESTO TECHNOLOGIES AT45DB041E-SHN-B 闪存, 串行, 4 Mbit, 2048 页 x 256字节, 85 MHz, SPI, SOIC, 8 引脚
|
|||
|
|
ETC2 | 功能相似 |
Adesto ### 快闪存储器 闪存 IC 是非易失 RAM,必须按块写入/擦除。 它有限定的写入周期的次数,适用于不经常更改的程序存储。
|
|||
SST25VF040B-50-4I-SAF
|
Microchip | 类似代替 | SOIC-8 |
SST25VF040B 串行 SPI SuperFlash® 存储器 ### 闪存,Microchip
|
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