Technical parameters/forward voltage: 700 mV
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage of gate source: -40.0 V (min)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/height: 1.02 mm
External dimensions/packaging: SOT-23
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SST201-E3
|
Vishay Siliconix | 完全替代 | SOT-23 |
JFET 25V 0.7mA
|
||
SST201-T1-E3
|
VISHAY | 功能相似 | TO-236 |
VISHAY SST201-T1-E3 JFET Transistor, JFET, -40V, 200A, 1mA, -1.5V, TO-236, JFET
|
||
SST201-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY SST201-T1-E3 JFET Transistor, JFET, -40V, 200A, 1mA, -1.5V, TO-236, JFET
|
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