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Model SST39SF020A-70-4I-NHE

Description SST39SF010A/020A/040 Parallel SuperFlash ® Microchip's SST39SF010A/020A/040 series devices are parallel multi-purpose SuperFlash devices ® Storage integrated circuit. ###Features 4.5-5.5V read and write operation lifespan -100000 cycles (typical) low power consumption - active current 10 mA, standby current 30 μ A (typical value at 14 MHz) sector erase capability - uniform 4K sector read access time -55 to 70 ns sector erase time 18 ms chip erase time: 70 ms (typical) byte programming time -14 μ s (typical) chip rewrite time - SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical value) latch address and data automatic write timing - internal VPP generation write end detection - trigger bit - data # polling TTL input/output compatibility JEDEC standard - flash EEPROM pin output and command kit # # # Flash memory, Microchip

Brand: Microchip

Packaging PLCC-32

Delivery time

Packaging method Tube

Standard packaging quantity 1

5+:

$ 17.7197

50+:

$ 16.9624

200+:

$ 16.5383

500+:

$ 16.4323

1000+:

$ 16.3263

2500+:

$ 16.2052

5000+:

$ 16.1294

7500+:

$ 16.0537

Price	$ 17.7197	$ 16.9624	$ 16.5383	$ 16.4323	$ 16.3263
Start batch production	5+	50+	200+	500+	1000+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(2592) Minimum order quantity(5)

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Technical parameters/power supply voltage (DC): 4.50V (min)

Technical parameters/working voltage: 4.5V ~ 5.5V

Technical parameters/power supply current: 25 mA

Technical parameters/number of pins: 32

Technical parameters/digits: 8

Technical parameters/access time: 70 ns

Technical parameters/memory capacity: 250000 B

Technical parameters/access time (Max): 70 ns

Technical parameters/operating temperature (Max): 85 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/power supply voltage: 4.5V ~ 5.5V

Technical parameters/power supply voltage (Max): 5.5 V

Technical parameters/power supply voltage (Min): 4.5 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 32

Encapsulation parameters/Encapsulation: PLCC-32

External dimensions/length: 14.05 mm

External dimensions/width: 11.51 mm

External dimensions/height: 2.84 mm

External dimensions/packaging: PLCC-32

Physical parameters/operating temperature: -40℃ ~ 85℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Industrial, computer and computer peripherals, communication and networking, Consumer Electronics, consumer electronics products, Industrial, Communications & Networking, Computers & Computer Peripherals

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Customs information/ECCN code: 3A991.b.1.a

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
SST39SF020A-70-4C-NHE	Microchip	类似代替	PLCC-32	SST39SF010A/020A/040 并行 SuperFlash® 存储器 Microchip 的 SST39SF010A/020A/040 系列设备为并行多用途 SuperFlash® 存储集成电路。 ### 特点 4.5-5.5V 读写操作寿命 - 100,000 次循环（典型）低功耗 - 有源电流 10 mA，待机电流 30 μA（14 MHz 时的典型值）扇区擦除能力 - 均匀 4 K 扇区读取访问时间 - 55 至 70 ns 扇区擦除时间 18 ms 芯片擦除时间：70 ms（典型）字节编程时间 - 14 μs（典型）芯片重写时间 – SST39SF010A 2 秒、SST39SF020A 4 秒、SST39SF040 8 秒（典型值）锁存地址和数据自动写入计时 - 内部 VPP 生成写入结束检测 - 触发位 - 数据# 轮询 TTL 输入/输出兼容性 JEDEC 标准 - 闪存 EEPROM 引脚输出和命令套件 ### 闪存，Microchip	PDF
SST39SF020A-70-4C-NHE	Silicon Storage Tech	类似代替	PLCC	SST39SF010A/020A/040 并行 SuperFlash® 存储器 Microchip 的 SST39SF010A/020A/040 系列设备为并行多用途 SuperFlash® 存储集成电路。 ### 特点 4.5-5.5V 读写操作寿命 - 100,000 次循环（典型）低功耗 - 有源电流 10 mA，待机电流 30 μA（14 MHz 时的典型值）扇区擦除能力 - 均匀 4 K 扇区读取访问时间 - 55 至 70 ns 扇区擦除时间 18 ms 芯片擦除时间：70 ms（典型）字节编程时间 - 14 μs（典型）芯片重写时间 – SST39SF010A 2 秒、SST39SF020A 4 秒、SST39SF040 8 秒（典型值）锁存地址和数据自动写入计时 - 内部 VPP 生成写入结束检测 - 触发位 - 数据# 轮询 TTL 输入/输出兼容性 JEDEC 标准 - 闪存 EEPROM 引脚输出和命令套件 ### 闪存，Microchip	PDF
SST39SF020A-70-4I-NHE-T	Microchip	完全替代	PLCC-32	Flash Parallel 5V 2Mbit 256K x 8Bit 70ns 32Pin PLCC T/R	PDF