Technical parameters/power supply voltage (DC): | 4.50V (min) |
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Technical parameters/digits: | 8 |
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Technical parameters/access time: | 70 ns |
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Technical parameters/memory capacity: | 250000 B |
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Technical parameters/access time (Max): | 70 ns |
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Technical parameters/operating temperature (Max): | 70 ℃ |
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Technical parameters/operating temperature (Min): | 0 ℃ |
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Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 4.5 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 32 |
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Encapsulation parameters/Encapsulation: | PLCC-32 |
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Dimensions/Length: | 14.05 mm |
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Dimensions/Width: | 11.51 mm |
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Dimensions/Height: | 2.84 mm |
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Dimensions/Packaging: | PLCC-32 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ (TA) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | 3A991.b.1.a |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SST39SF020A-70-4C-NHE-T
|
Microchip | 完全替代 | PLCC-32 |
Flash Parallel 5V 2Mbit 256K x 8Bit 70ns 32Pin PLCC T/R
|
||
SST39SF020A-70-4I-NHE
|
Microchip | 类似代替 | PLCC-32 |
SST39SF010A/020A/040 并行 SuperFlash® 存储器 Microchip 的 SST39SF010A/020A/040 系列设备为并行多用途 SuperFlash® 存储集成电路。 ### 特点 4.5-5.5V 读写操作 寿命 - 100,000 次循环(典型) 低功耗 - 有源电流 10 mA,待机电流 30 μA(14 MHz 时的典型值) 扇区擦除能力 - 均匀 4 K 扇区 读取访问时间 - 55 至 70 ns 扇区擦除时间 18 ms 芯片擦除时间:70 ms(典型) 字节编程时间 - 14 μs(典型) 芯片重写时间 – SST39SF010A 2 秒、SST39SF020A 4 秒、SST39SF040 8 秒(典型值) 锁存地址和数据 自动写入计时 - 内部 VPP 生成 写入结束检测 - 触发位 - 数据# 轮询 TTL 输入/输出兼容性 JEDEC 标准 - 闪存 EEPROM 引脚输出和命令套件 ### 闪存,Microchip
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