Technical parameters/frequency: 200 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 1 W
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/DC current gain (hFE): 160
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: RF communication, industrial, power management, portable equipment
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Micro Commercial Components | 类似代替 | TO-92 |
TO-92 PNP 25V 1.5A
|
||
SS8550D
|
Fairchild | 类似代替 | TO-92 |
TO-92 PNP 25V 1.5A
|
||
SS8550DBU
|
ON Semiconductor | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR SS8550DBU 单晶体管 双极, PNP, -25 V, 200 MHz, 1 W, -1.5 A, 160 hFE
|
||
SS8550DTA
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR SS8550DTA 单晶体管 双极, PNP, -25 V, 200 MHz, 1 W, -1.5 A, 160 hFE
|
||
SS8550DTA
|
ON Semiconductor | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR SS8550DTA 单晶体管 双极, PNP, -25 V, 200 MHz, 1 W, -1.5 A, 160 hFE
|
||
|
|
Rochester | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR SS8550DTA 单晶体管 双极, PNP, -25 V, 200 MHz, 1 W, -1.5 A, 160 hFE
|
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