Technical parameters/frequency: 200 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 160 @100mA, 1V
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 160
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Micro Commercial Components | 功能相似 | TO-92 |
TO-92 Plastic-Encapsulate Transistors / Capable of 1W / Collector-current 1.5A / Collector-base Voltage 40V
|
||
SS8550DBU
|
ON Semiconductor | 功能相似 | TO-92 |
ON Semiconductor SS8550DBU , PNP 晶体管, 1.5 A, Vce=25 V, HFE:40, 200 MHz, 3引脚 TO-92封装
|
||
SS8550DTA
|
Fairchild | 功能相似 | TO-226-3 |
ON Semiconductor SS8550DTA , PNP 晶体管, 1.5 A, Vce=25 V, HFE:40, 200 MHz, 3引脚 TO-92封装
|
||
SS8550DTA
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON Semiconductor SS8550DTA , PNP 晶体管, 1.5 A, Vce=25 V, HFE:40, 200 MHz, 3引脚 TO-92封装
|
||
|
|
Rochester | 功能相似 | TO-92 |
ON Semiconductor SS8550DTA , PNP 晶体管, 1.5 A, Vce=25 V, HFE:40, 200 MHz, 3引脚 TO-92封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review