Technical parameters/frequency: 270 MHz
Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.45 W
Technical parameters/collector breakdown voltage: 50.0 V
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 400 @1mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 1000
Technical parameters/rated power (Max): 450 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC337-25RL1G
|
Rochester | 功能相似 | TO-92 |
放大器晶体管NPN硅 Amplifier Transistors NPN SILICON
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BC337-25RL1G
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ON Semiconductor | 功能相似 | TO-92-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN SILICON
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BC547BRL1G
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ON Semiconductor | 功能相似 | TO-92-3 |
ON SEMICONDUCTOR BC547BRL1G 单晶体管 双极, NPN, 45 V, 300 MHz, 1.5 W, 100 mA, 200 hFE
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