Technical parameters/frequency: 210 MHz
Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 800 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 210 MHz
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/minimum current amplification factor (hFE): 160 @100mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC337-25RL1G
|
Rochester | 类似代替 | TO-92 |
放大器晶体管NPN硅 Amplifier Transistors NPN SILICON
|
||
BC337-25RL1G
|
ON Semiconductor | 类似代替 | TO-92-3 |
放大器晶体管NPN硅 Amplifier Transistors NPN SILICON
|
||
BC33725TA
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON Semiconductor BC33725TA , NPN 晶体管, 800mA, Vce=45 V, HFE:100, 100 MHz, 3引脚 TO-92封装
|
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