Technical parameters/drain source resistance: 12 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 15A
Technical parameters/rise time: 7 ns
Technical parameters/descent time: 8 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2305ADS-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
MOSFET 8V 4.1A 1.7W 40mohm @ 4.5V
|
||
SI5980DU-T1-GE3
|
Vishay Siliconix | 功能相似 | ChipFET-8 |
MOSFET 100V 2.5A 7.8W 0.567Ω @ 10V
|
||
SIR168DP-T1-GE3
|
Vishay Semiconductor | 类似代替 |
Mosfet n-Ch 30V 40A Ppak So-8
|
|||
SIR168DP-T1-GE3
|
Vishay Intertechnology | 类似代替 |
Mosfet n-Ch 30V 40A Ppak So-8
|
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