Technical parameters/dissipated power: 960mW (Ta), 1.7W (Tc)
Technical parameters/drain source voltage (Vds): 8 V
Technical parameters/Input capacitance (Ciss): 740pF @4V(Vds)
Technical parameters/dissipated power (Max): 960mW (Ta), 1.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1.45 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -50℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2305ADS-T1-GE3
|
Vishay Intertechnology | 完全替代 | SOT-23-3 |
MOSFET 8V 4.1A 1.7W 40mohms @ 4.5V
|
||
SI2305CDS-T1-GE3
|
Vishay Intertechnology | 类似代替 | SOT-23-3 |
VISHAY SI2305CDS-T1-GE3 MOSFET Transistor, P Channel, -5.8A, -8V, 0.028Ω, -4.5V, -1V
|
||
SI5980DU-T1-GE3
|
Vishay Siliconix | 功能相似 | ChipFET-8 |
MOSFET 100V 2.5A 7.8W 0.567Ω @ 10V
|
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