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Model SQ4410EY-T1-GE3
Description VISHAY SQ4410EY-T1-GE3 Transistor, MOSFET, N-channel, 15 A, 30 V, 0.009 ohm, 10 V, 2 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method
Standard packaging quantity 1
4.08  yuan 4.08yuan
5+:
$ 5.5040
25+:
$ 5.0963
50+:
$ 4.8109
100+:
$ 4.6886
500+:
$ 4.6070
2500+:
$ 4.5051
5000+:
$ 4.4643
10000+:
$ 4.4032
Quantity
5+
25+
50+
100+
500+
Price
$5.5040
$5.0963
$4.8109
$4.6886
$4.6070
Price $ 5.5040 $ 5.0963 $ 4.8109 $ 4.6886 $ 4.6070
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5261) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.009 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 1906pF @25V(Vds)

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 5 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.55 mm

External dimensions/packaging: SOIC

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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SI2305ADS-T1-GE3 SI2305ADS-T1-GE3 Vishay Intertechnology 功能相似 SOT-23-3
MOSFET 8V 4.1A 1.7W 40mohms @ 4.5V
SI5980DU-T1-GE3 SI5980DU-T1-GE3 Vishay Siliconix 功能相似 ChipFET-8
MOSFET 100V 2.5A 7.8W 0.567Ω @ 10V
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