Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 25W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 11A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 790pF @50V(Vds)
Technical parameters/rated power (Max): 25 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF12NM60N
|
ST Microelectronics | 类似代替 | TO-220-3 |
N沟道600V - 0.35ヘ - 10A - D2 / I2PAK - TO- 220 / FP - TO- 247第二代MDmesh⑩功率MOSFET N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
||
STF13NM60N
|
ST Microelectronics | 类似代替 | TO-220-3 |
N 通道 MDmesh™，600V/650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
||
STFI13NM60N
|
ST Microelectronics | 功能相似 | TO-262-3 |
600V,11A,N沟道MOSFET
|
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