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Model STF13NM60N

Description N 通道 MDmesh™，600V/650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics

Brand: ST Microelectronics

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	360 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	25 W
Technical parameters/Input capacitance:	790 pF
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/Leakage source breakdown voltage:	600 V
Technical parameters/Continuous drain current (Ids):	5.50 A
Technical parameters/rise time:	8 ns
Technical parameters/Input capacitance (Ciss):	790pF @50V(Vds)
Technical parameters/rated power (Max):	25 W
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	25W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.4 mm
Dimensions/Width:	4.6 mm
Dimensions/Height:	16.4 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs Information/Hong Kong Import and Export License:	NLR

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
STF12NM60N	ST Microelectronics	类似代替	TO-220-3	N沟道600V - 0.35ヘ - 10A - D2 / I2PAK - TO- 220 / FP - TO- 247第二代MDmesh⑩功率MOSFET N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET	PDF
STF13NM60N-H	ST Microelectronics	类似代替	TO-220-3	TO-220FP N-CH 600V 11A	PDF
STFI13NM60N	ST Microelectronics	完全替代	TO-262-3	600V,11A,N沟道MOSFET	PDF